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TYPICAL PERFORMANCE CURVES (R)
APT50GP60JDQ2 600V
APT50GP60JDQ2
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * SSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT50GP60JDQ2 UNIT Volts
600 30 100 46 190 190A @ 600V 329 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 525A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 3 4.5 2.2 2.1 525
2
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7496
APT Website - http://www.advancedpower.com
Rev A
11-2005
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
A
3000
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GP60JDQ2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 50A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V RG = 4.3 I C = 50A VGE = 15V MIN TYP MAX UNIT pF V nC
5700 465 30 7.5 165 40 50 190 19 36 85 60 465 835 635 19 36 115 85 465 1260 1060 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V RG = 4.3 I C = 50A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.38 1.21 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7496
Rev A
11-2005
TYPICAL PERFORMANCE CURVES
70 60 50 40
70 60 50 40 30 20 10 0
APT50GP60JDQ2
IC, COLLECTOR CURRENT (A)
TJ = -55C
30 20
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C
TJ = 25C TJ = 125C
10 0
100
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 50A C T = 25C
J
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0
VCE = 120V VCE = 300V
TJ = -55C TJ = 25C TJ = 125C
8 6 4 2 0 33.5
VCE = 480V
0
23 456 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
1
0
20
40
60 80 100 120 140 160 180 GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 2.5 2.0 1.5 1.0 0.5
IC = 100A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
3 2.5 2
IC = 100A IC = 50A IC = 25A
IC = 50A IC = 25A
1.5 1 0.5
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
140
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50
IC, DC COLLECTOR CURRENT(A)
1.15
120 100 80 60 40 20 11-2005 050-7496 Rev A
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
25
td(ON), TURN-ON DELAY TIME (ns) VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns)
140 120 100 80 60 40 20 VCE = 400V RG = 4.3
VGE =15V,TJ=25C
APT50GP60JDQ2
20
VGE =15V,TJ=125C
15
10
5 VCE = 400V TJ = 25C or 125C
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
90 80 70
tf, FALL TIME (ns) tr, RISE TIME (ns)
RG = 4.3, L = 100H, VCE = 400V
0
RG = 4.3 L = 100H
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
120 100 80 60 40 20 0
TJ = 25C, VGE = 15V
RG = 4.3, L = 100H, VCE = 400V
0
L = 100H
TJ = 125C, VGE = 15V
60 50 40 30 20 10
TJ = 25 or 125C,VGE = 15V
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
4000
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
= 400V V CE = +15V V GE R = 4.3
G
0
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
3500
= 400V V CE = +15V V GE R = 4.3
G
3500 3000 2500 2000 1500 1000 500 0
TJ = 125C
3000 2500 2000 1500 1000 500
TJ = 125C
TJ = 25C
TJ = 25C
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
6000
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
4000 SWITCHING ENERGY LOSSES (J) 3500 3000 2500 2000 1500 1000 500 0
Eon2,50A Eoff,50A Eon2,25A Eoff,25A
= 400V V CE = +15V V GE R = 4.3
G
0
5000 4000 3000 2000
Eon2,100A Eoff,100A
Eon2,100A Eoff,100A
11-2005
Eon2,50A Eoff,50A Eoff,25A
Rev A
1000 E 25A on2, 0
050-7496
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000 IC, COLLECTOR CURRENT (A)
Cies
200 180 160 140 120 100 80 60 40 20
APT50GP60JDQ2
C, CAPACITANCE ( F)
1,000 500
Coes
P
100 50
Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.40 0.35 0.30 0.25 0.20 0.15 0.3 0.10 0.05 0 10
-5
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
0.5
Note:
PDM
t1 t2
0.1 0.05 10
-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
220 FMAX, OPERATING FREQUENCY (kHz)
100
Junction temp. (C)
RC MODEL
0.0775
0.0158
50
F
Power (watts)
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 667V CE R = 4.3
G
0.216
0.313
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.0855 Case temperature. (C)
4.49
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
10
20
050-7496
Rev A
11-2005
APT50GP60JDQ2
APT30DQ60
Gate Voltage
10%
TJ = 125 C
td(on)
V CC
IC
V CE
tr 90%
Collector Current
A D.U.T.
5%
10%
5 % Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
TJ = 125 C
td(off)
90%
tf
Collector Voltage
0 Switching Energy 10% Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
050-7496
Rev A
11-2005
TYPICAL PERFORMANCE CURVES
APT50GP60JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 50A Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT50GP60JDQ2 UNIT Amps
30 42 320
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.1 2.6 1.75
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40 ZJC, THERMAL IMPEDANCE (C/W) 1.20 1.00 0.80 0.60 0.40 0.20 0 0.7 0.5 0.3 0.1 0.05 10
-5
21 105 115 3 125 465 7 60 830 23 -
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
D = 0.9
Note:
PDM
t1 t2
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
0.320
0.00278
Power (watts)
0.515
0.0421
0.375 Case temperature (C)
0.242
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7496
Rev A
11-2005
Junction temp (C)
140 120 IF, FORWARD CURRENT (A) 100 80 60 40 20 0 0 TJ = 125C TJ = -55C TJ = 25C trr, REVERSE RECOVERY TIME (ns)
200 60A 150
APT50GP60JDQ2
T = 125C J V = 400V
R
TJ = 175C
100
30A 15A
50
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC) 1200 1000 800 600 400 15A 200 0
T = 125C J V = 400V
R
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 5 0
T = 125C J V = 400V
R
0
60A
60A
30A
30A
15A
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 50 45 40
Duty cycle = 0.5 T = 175C
J
trr IRRM
Qrr
35 IF(AV) (A) 30 25 20
trr
Qrr
0.2 0.0
15 10 5
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
200 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
11-2005
50
Rev A
050-7496
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT6017LLL
APT50GP60JDQ2
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
11-2005 050-7496 Rev A
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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